Spin-storage mechanism in interfacial phase-change memory (iPCM)
نویسندگان
چکیده
Interfacial phase change memory (iPCM) is magnetic sensitive at room temperature while the alloy with same composition is not. The unique property has been thought to be related to the topological insulating property. We discuss the magnetic properties on the point of view of the spatial inversion symmetry of iPCM structures and ferroelectricity of GeTe layers sandwiched by topological insulating layers.
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